Bf199 npn medium frequency transistor dbook, halfpage m3d186. Hfe has minimum and maximum values, though both may not be listed. In certain cases, the quoted collector current may be exceeded. Npn medium frequency transistor bf199 limiting values in accordance with the absolute maximum rating system iec 604.
Kst90160002sts90absolute maximum ratingsta25ccharacteristicsymbolratingsunit datasheet search, datasheets, datasheet search site for electronic. This transistor is an electrostaticsensitive device. Storage temperature operating and storage humidity f c901622 c954602 c954702 c901621 c954601 c954701 c9016. Im trying to update as much information as possible, even if i can not find perfect information. I try to take the best pictures i can to show the item from multiple angles.
C typical characteristics static characteristics collectoremitter voltage, vce v collector current, i c ma 02 4 6 810 10 9 8 7 6 5 4 3 2 1 0 5 7 9 ib90a ib80a ib70a ib50a ib60a ib40a ib30a ib20a ib10a dc. Lead temperature soldering, transistors page 2 310505 v1. Emy1 umy1n fmy1a datasheet labsolute maximum ratings ta 25c parameter symbol tr1pnp tr2npn unit collectorbase voltage vcbo60 60 v collectoremitter voltage vceo50 50 v emitterbase voltage vebo6 7 v collector current ic150 150 ma power dissipation emy1 umy1n pd1 2 150 mwtotal fmy1a pd1 3 300 mwtotal junction. It is the maximum collector base voltage again it is generally measured with the emitter left open circuit. Igbt datasheet tutorial introduction this application note is intended to provide detailed explanations about parameters and diagrams included in the datasheet of trenchgate field stop igbts offered in discrete packages such as. C3199 datasheet 50v, 150ma, npn transistor kec, ktc3199 datasheet, c3199 pdf, c3199 pinout, equivalent, data, circuit, output, ic, c3199 schematic. Mosiii 2sj668 relay drive, dcdc converter and motor drive applications z 4 v gate drive z low drainsource onresistance. Transistor uses, transistor rules, common emitter circuit, small signal amplification, fieldeffect transistors, jfet operating regions.
Parameter collectorbase breakdown voltage collectoremitter breakdown voltage emitterbase breakdown voltage collector. S90 datasheet, jiangsu changjiang electronics technology co,ltd sot23 plasticencapsulate transistors sot23 s90lt1 features 1. It is recommended that transistors not be allowed to operate near these values, lest their lifespan be shortened. Understanding hfe in data sheets all about circuits. Vcb is the voltage between the collector and the base. D absolute maximum ratings t a25c, unless otherwise specified parameter symbol ratings unit collectorbase voltage v cbo50 v collectoremitter voltage v ceo45 v emitterbase voltage v ebo5 v collector current i c100 ma. 0 absolute maximum rating ta 25c unless specified otherwise description symbol 2n5416 units collector emitter voltage vceo 300 collector base voltage cbo 350v emitter base voltage vebo 6 collector current continuous ic 1 a. Sep 18, 2019 c3199 datasheet 50v, 150ma, npn transistor kec, ktc3199 datasheet, c3199 pdf, c3199 pinout, equivalent, data, circuit, output, ic, c3199 schematic. S9016 datasheet, s9016 pdf, s9016 data sheet, s9016 manual, s9016 pdf, s9016, datenblatt, electronics s9016, alldatasheet, free, datasheet, datasheets, data sheet. Complementary pair with sts9012 ordering information type no. R1 is not part of the transistor, its just a typical load to work against for the simulation. Npn power transistor datasheet, npn power transistor pdf, npn power transistor data sheet, datasheet, data sheet, pdf.
Preliminary first production this datasheet contains preliminary data, and. Specifications may change in any manner without notice. This parameter is the collector to base breakdown voltage of a bipolar transistor. I want to share this experience and information with each other to create a blog that helps each other. Preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a.
Recent listings manufacturer directory get instant insight. It is a blog created to share various information with you in more complete and detailed contents. This datasheet contains the design specifications for product development. Pnp resistorequipped transistor see simplified outline, symbol and pinning for package details. S9016 datasheetpdf 1 page list of unclassifed manufacturers. D typical characterics 110 10 100 collector current, ic ma dc current gain, h fe dc current gain vce5v 1. Characteristics tamb 25 c unless otherwise specified.
High speed switching and linear amplifier appliances in military, industrial and. Npn epitaxial silicon transistor datasheet catalog. Toshiba field effect transistor silicon pchannel mos type u. Temperature operating and storage humidity e c901601 c901602 700 214 50 17 borosilicate glass. Kst 9016 0002sts90absolute maximum ratingsta25ccharacteristicsymbolratingsunit datasheet search, datasheets, datasheet search site for electronic. The datasheet is printed for reference information.
Datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. Collector current datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes and other semiconductors. Lead temperature soldering, storage humidity e c901601 c901602 700 214 50 17. Marking package code sts90 sts90 to92 outline dimensions unit. Free device maximum ratings rating symbol value unit collector. A, february 2000 ss9015 pnp epitaxial silicon transistor absolute maximum ratings ta25c unless otherwise noted electrical characteristics ta25c unless otherwise noted hfe classification symbol parameter ratings units. Kst9016000 1 sts90 npn silicon transistor descriptions general purpose application.
Silicon npn triple diffused type pct process transistor, c5353 pdf download toshiba, c5353 datasheet pdf, pinouts, data sheet, equivalent, schematic, cross reference, obsolete, circuits. So thats great, but i dont really understand the datasheet information and what are the important bits. The breakdown voltage is where the transistor will stop operating or be destroyed if it is given an input voltage of that amount. Am9016 16,384 x 1 dynamic rw random access memory distinctive characteristics general description high density 16k x 1 organization the am9016 is a high speed, 16kbit, dynamic, readwrite direct replacement for mk4116 random access memory. Npn epitaxial silicon transistor absolute maximum ratings ta25c unless otherwise noted electrical characteristics ta25c unless otherwise noted hfe classification symbol parameter ratings units vcbo collectorbase voltage 50 v vceo collectoremitter voltage 30 v vebo emitterbase voltage 5 v ic collector current 30 ma pc collector power.
Absolute maximum ratings maximum temperatures storage temperature 555. The s9014 is an npn epitaxial silicon planar transistor designed for use in the audio output stage and converterinverter circuits. And its always 100 or always 50 and never anything else. According to the datasheet, the typical values are 2v for on. So i started to make transistor circuits in real life.
Free transistor circuits books download ebooks online. Storage temperature range t stg55 150 c electrical characteristics ta25c characteristic symbol test condition min. Transistor datasheet, transistor pdf, transistor data sheet, transistor manual, transistor pdf, transistor, datenblatt, electronics transistor, alldatasheet, free. Transistor specifications explained electronics notes. It is defined as a gain because a small signal at the base produces a much larger signal at the collector.
The datasheet shows the internals of the transistor, which looks like this a rough approximation using a typical npn r2 and r3 are internal to the transistor. Lead temperature soldering, storage humidity e c9016. Anyway, i understand the concept of a transistor, how it can be used for switching and i have tried it on a breadboard and wow i got it working etc. Bolt down on to a heatsink with silicon thermal compound between bridge and mounting surface for maximum heat transfer with a number 6 screw. Silicon offers good overall performance with a base emitter junction turn on voltage of around 0. Unit output cutoff current i ooff v o50v, v i0 500 na dc current gain g i v o5v, i o10ma 70 120 output voltage v oon i o10ma, i i0.