If you cant search it here, nowhere else in the world. Preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a. The datasheet is printed for reference information only. The 2sc1211 transistor might have a current gain anywhere between 55 and 300. Bc517 datasheet, bc517 pdf, bc517 data sheet, datasheet, data sheet, pdf. Darlington transistor to 92 absolute maximum ratings maximum temperatures storage temperature.
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Description darlington transistorsnpn silicon download 6 pages. Tstg storage temperature 65 150 c 1 device mounted on an fr4 printedcircuitboard pcb. On semiconductor s bc817 40w is a general purpose npn transistor that is housed in the sc 70sot 323 package. Lm2940lm2940c 1a low dropout regulator general description the lm2940lm2940c positive voltage regulator features the ability to source 1a of output current with a dropout voltage of typically 0. This device is designed for applications requiring. Semiconductor data sheets andor specifications can and do vary in different applications and actual. Motorola smallsignal transistors, fets and diodes device data. Specifications may change in any manner without notice. Units icbo collector cutoff current v cb30v, ie0 15 na. Pinning pin description 1 emitter 2 base 3 collector fig. Motorola order this document semiconductor technical data by bc517 d darlington transistors npn silicon bc517 collector 1 base 2 emitter 3 1 2 3 maximum ratings case 2904, style 17 rating symbol value unit to92 to226aa collectoremitter voltage vces 30 vdc collectorbase voltage vcb 40 vdc emitterbase voltage veb 10 vdc collector. Dac0830dac0832 8bit p compatible, doublebufferedd to a.
Furthermore, a quiescent current reduction circuit has been included which reduces the. Bc546b, bc547a, b, c, bc548b, c amplifier transistors. Datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. A bc517 npn darlington transistor january 2005 bc517 npn darlington transistor this device is designed for applications requiring extremely high current gain at currents to 1. Free devices maximum ratings rating symbol value unit collector. January 2008 rev 5 112 12 bd6xxx complementary power darlington transistors features good hfe linearity high ft frequency monolithic darlington configuration with integrated antiparallel collectoremitter diode applications. January 2008 rev 5 112 12 bd6xxx complementary power darlington transistors features good hfe linearity high ft frequency monolithic darlington configuration with. Bcx38c silicon planar medium power darlington transistor.
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